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  • BSI
    BS ISO 21820:2021 Fine ceramics (advanced ceramics, advanced technical ceramics). Ultraviolet photoluminescence image test method for analysing polytypes of boron- and nitrogen-doped SiC crystals
    Edition: 2021
    $418.55
    / user per year

Description of BS ISO 21820:2021 2021

This document specifies a test method for determining the polytypes and their ratios in silicon carbide (SiC) wafers or bulk crystals using ultraviolet photoluminescence (UVPL) imaging. The range of SiC is limited to semiconductor SiC doped with nitrogen and boron to have a deep acceptor level and a shallow donor level, respectively. The SiC wafers or bulk crystals discussed in this document typically show electrical resistivities ranging from 10?3 ohm · cm to 10?2 ohm · cm, applicable to power electronic devices.

This method is applicable to the SiC-crystal 4H, 6H and 15R polytypes that contain boron and nitrogen as acceptor and donor, respectively, at concentrations that produce donor-acceptor pairs (DAPs) to generate UVPL. In 4H-SiC the boron and nitrogen concentrations typically range from 1016 cm?3 to 1018 cm?3. Semi-insulating SiC is not of concern because it usually contains minimal boron and nitrogen; therefore deep level cannot be achieved.



Standard NumberBS ISO 21820:2021
TitleFine ceramics (advanced ceramics, advanced technical ceramics). Ultraviolet photoluminescence image test method for analysing polytypes of boron- and nitrogen-doped SiC crystals
StatusDefinitive
Publication Date2021-02-19
Identical National Standard OfISO 21820
DescriptorsTest specimens, Test methods, Special ceramics, Ceramics, Bond strength
ICS81.060.30 Advanced ceramics
CommitteeRPI/13
ISBN978 0 580 96048 2
PublisherBSI
Pages36

About BSI

BSI Group, also known as the British Standards Institution is the national standards body of the United Kingdom. BSI produces technical standards on a wide range of products and services and also supplies certification and standards-related services to businesses.
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