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eLibrary > 23/30472390 DC BS EN 60747-16-11 Semiconductor devices - Part 16-11. Microwave integrated circuits - Power detectors >

23/30472390 DC BS EN 60747-16-11 Semiconductor devices - Part 16-11. Microwave integrated circuits - Power detectors, 2023

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23/30472390 DC BS EN 60747-16-11 Semiconductor devices - Part 16-11. Microwave integrated circuits - Power detectors, 2023

47E_806e_CD.pdf [Go to Page]
FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Essential ratings and characteristics [Go to Page]
4.1 General requirements [Go to Page]
4.1.1 Circuit identification and types
4.1.2 General function description
4.1.3 Manufacturing technology
4.1.4 Package identification
4.2 Application description [Go to Page]
4.2.1 Conformance to system and/or interface information
4.2.2 Overall block diagram
4.2.3 Reference data
4.2.4 Electrical compatibility
4.2.5 Associated devices
4.3 Specification of the function [Go to Page]
4.3.1 Detailed block diagram – Functional blocks
4.3.2 Identification and function of terminals
4.3.3 Function description
4.4 Limiting values (absolute maximum rating system) [Go to Page]
4.4.1 Requirements
4.4.2 Electrical limiting values
4.4.3 Temperatures
4.5 Operating conditions (within the specified operating temperature range)
4.6 Electrical characteristics
4.7 Mechanical and environmental ratings, characteristics and data
4.8 Additional information
5 Measuring methods [Go to Page]
5.1 General [Go to Page]
5.1.1 General precautions
5.1.2 Characteristic impedance
5.1.3 Handling precautions
5.1.4 Types
5.2 Tangential signal sensitivity (PTSS) [Go to Page]
5.2.1 Purpose
5.2.2 Circuit diagram
5.2.3 Principle of measurement
5.2.4 Circuit description and requirements
5.2.5 Precautions to be observed
5.2.6 Measurement procedure
5.2.7 Specified conditions
5.3 Input return loss (RL) [Go to Page]
5.3.1 Purpose
5.3.2 Measuring methods [Go to Page]
5.3.2.1 General
5.3.2.2 Measuring method 1 [Go to Page]
5.3.2.2.1 Circuit diagram
5.3.2.2.2 Principle of measurement
5.3.2.2.3 Circuit description and requirements
5.3.2.2.4 Precautions to be observed
5.3.2.2.5 Measurement procedure
5.3.2.2.6 Specified conditions
5.3.2.3 Measuring method 2 [Go to Page]
5.3.2.3.1 Circuit diagram
5.3.2.3.2 Principle of measurement
5.3.2.3.3 Circuit description and requirements
5.3.2.3.4 Precautions to be observed
5.3.2.3.5 Measurement procedure
5.3.2.3.6 Specified conditions
5.4 Output voltage (Vo) [Go to Page]
5.4.1 Purpose
5.4.2 Circuit diagram
5.4.3 Principle of measurement
5.4.4 Circuit description and requirements
5.4.5 Precautions to be observed
5.4.6 Measurement procedure
5.4.7 Specified conditions
5.5 Voltage sensitivity (βv) [Go to Page]
5.5.1 Purpose
5.5.2 Circuit diagram
5.5.3 Principle of measurement
5.5.4 Circuit description and requirements
5.5.5 Precautions to be observed
5.5.6 Measurement procedure
5.5.7 Specified conditions
5.6 Current sensitivity (βi) [Go to Page]
5.6.1 Purpose
5.6.2 Circuit diagram
5.6.3 Principle of measurement
5.6.4 Circuit description and requirements
5.6.5 Precautions to be observed
5.6.6 Measurement procedure
5.6.7 Specified conditions
5.7 Frequency response flatness (△P) [Go to Page]
5.7.1 Purpose
5.7.2 Circuit diagram
5.7.3 Principle of measurement
5.7.4 Circuit description and requirements
5.7.5 Precautions to be observed
5.7.6 Measurement procedure
5.7.7 Specified conditions
5.8 Output slope (k) [Go to Page]
5.8.1 Purpose
5.8.2 Circuit diagram
5.8.3 Principle of measurement
5.8.4 Circuit description and requirements
5.8.5 Precautions to be observed
5.8.6 Measurement procedure
5.8.7 Specified conditions
5.9 Output intercept point (Pip) [Go to Page]
5.9.1 Purpose
5.9.2 Circuit diagram
5.9.3 Principle of measurement
5.9.4 Circuit description and requirements
5.9.5 Precautions to be observed
5.9.6 Measurement procedure
5.9.7 Specified conditions
5.10 Dynamic range [Go to Page]
5.10.1 Purpose
5.10.2 Circuit diagram
5.10.3 Principle of measurement
5.10.4 Circuit description and requirements
5.10.5 Precautions to be observed
5.10.6 Measurement procedure
5.10.7 Specified conditions
5.11 Temperature sensitivity (βT) [Go to Page]
5.11.1 Purpose
5.11.2 Circuit diagram
5.11.3 Principle of measurement
5.11.4 Circuit description and requirements
5.11.5 Precautions to be observed
5.11.6 Measurement procedure
5.11.7 Specified conditions
5.12 Rise time(tr(out)), fall time(tf(out)), rising edge propagation delay(trd) and falling edge propagation delay(tfd) [Go to Page]
5.12.1 Purpose
5.12.2 Circuit diagram
5.12.3 Principle of measurement
5.12.4 Circuit description and requirements
5.12.5 Precautions to be observed
5.12.6 Measurement procedure
5.12.7 Specified conditions
Bibliography [Go to Page]

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23/30472390 DC BS EN 60747-16-11 Semiconductor devices - Part 16-11. Microwave integrated circuits - Power detectors, 2023

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