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IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports -- Part 3: Silicon PN-Junction, 2017
- IEEE Std C62.42.3™-2017 Front cover
- Title page
- Important Notices and Disclaimers Concerning IEEE Standards Documents
- Participants
- Introduction
- Contents
- List of Figures
- 1. Scope
- 2. Normative references
- 3. Definitions, acronyms, and abbreviations [Go to Page]
- 3.1 Definitions
- 3.2 Acronyms and abbreviations
- 4. Construction [Go to Page]
- 4.1 Packaging
- 4.2 Semiconductor junction structure and electrical properties
- 5. Characteristics [Go to Page]
- 5.1 Stand-off or maximum reverse working voltage, VRWM
- 5.2 Breakdown voltage, V(BR)
- 5.3 Clamping voltage, VC
- 5.4 Punch-through voltage, V(PT)
- 5.5 Snap-back voltage, V(SB)
- 5.6 Forward biased PN-junction voltage, VF
- 5.7 Junction capacitance CJ
- 5.8 Package inductance
- 6. Ratings [Go to Page]
- 6.1 Peak pulse current, IPP
- 6.2 Maximum peak pulse power, PPPM
- 6.3 Power dissipation, PD
- 7. Application examples [Go to Page]
- 7.1 Series connection
- 7.2 Parallel connection
- 7.3 DC supply protection
- 7.4 Power frequency protection
- 7.5 Signal protection
- Annex A (informative) Bibliography
- Back cover [Go to Page]