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Description of ASTM-F1153 1997ASTM F1153-92-Reapproved1997Historical Standard: Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage MeasurementsASTM F1153Scope 1.1 This test method covers procedures for measurement of metal-oxide-silicon (MOS) structures for flatband capacitance, flatband voltage, average carrier concentration within a depletion length of the semiconductor-oxide interface, displacement of flatband voltage after application of voltage stress at elevated temperatures, mobile ionic charge contamination, and total fixed charge density. Also covered is a procedure for detecting the presence of P-N junctions in the subsurface region of bulk or epitaxial silicon. 1.2 The procedure is applicable to -type and -type bulk silicon with carrier concentration from 5 X 1014 to 5 X 1016 carriers per cm3, inclusive, and / + and / + epitaxial silicon with the same range of carrier concentration. 1.3 The procedure is applicable for test specimens with oxide thicknesses of 50 to 300 nm. 1.4 The procedure can give an indication of the level of defects within the MOS structure. These defects include interface trapped charge, fixed oxide charge, trapped oxide charge, and permanent inversion layers. 1.5 The precision of the procedure can be affected by inhomogeneities in the oxide or in the semiconductor parallel to the semiconductor-oxide interface. 1.6 The procedure is applicable for measurement of mobile ionic charge concentrations of 1 X 1010 cm-2 or greater. Alternative techniques, such as the triangular voltage sweep method (1), may be required where mobile ionic charge concentrations less than 1 X 1010 cm-2 must be measured. 1.7 The procedure is applicable for measurement of total fixed charge density of 5 X 1010 cm-2 or greater. Alternative techniques, such as the conductance method (2), may be required where the interface trapped-charge density component of total fixed charge of less than 5 X 1010 cm-2 must be measured. 1.8 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Keywords Average carrier concentration; Calibration-semiconductor instrumentation; Capacitance; Contamination-semiconductors; Defects-semiconductors; Dielectric constant (permittivity)/dissipation factor; Doping concentration; Electrical conductors-semiconductors; Electromagnetic interference; Equilibrium capacitance; Fixed oxide charge; Flatband capacitance/voltage; Interfacial tension; Inversion; Meal-oxide-silicon (MOS) structures; Minimum depletion layer capacitance; Mobile ionic charge contamination; Net carrier concentration; Oxide metallization thickness; Permanent inversion layers; Photosensitivity; Resistance and resistivity (electrical)-semiconductors; Silicon-semiconductor applications; Stress-electronic components/devices; Total fixed charge density; Trapped oxide charge; Voltage; metal-oxide-silicon (MOS) structures-characterization, by; capacitance-voltage measurements, test ICS Code ICS Number Code n/a DOI: 10.1520/F1153-92R97 This book also exists in the following packages...Subscription InformationMADCAD.com ASTM Standards subscriptions are annual and access is unlimited concurrency based (number of people that can access the subscription at any given time) from single office location. For pricing on multiple office location ASTM Standards Subscriptions, please contact us at info@madcad.com or +1 800.798.9296.
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About ASTMASTM International, formerly known as the American Society for Testing and Materials (ASTM), is a globally recognized leader in the development and delivery of international voluntary consensus standards. Today, some 12,000 ASTM standards are used around the world to improve product quality, enhance safety, facilitate market access and trade, and build consumer confidence. ASTM’s leadership in international standards development is driven by the contributions of its members: more than 30,000 of the world’s top technical experts and business professionals representing 150 countries. Working in an open and transparent process and using ASTM’s advanced electronic infrastructure, ASTM members deliver the test methods, specifications, guides, and practices that support industries and governments worldwide. |
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